Berkun, I.I.BerkunDemlow, S.N.S.N.DemlowSuwanmonkha, N.N.SuwanmonkhaHogan, T.P.T.P.HoganGrotjohn, T.A.T.A.Grotjohn2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38320410.1557/opl.2013.108A temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.enconference paper