Plettner, A.A.PlettnerHaberger, K.K.Haberger2022-03-082022-03-081997https://publica.fraunhofer.de/handle/publica/303630Process for the production of a semiconductor structure having a highly conductive buried layer, said process consisting of the following steps: application of an insulation layer on a first surface of a first semiconductor substrate, application of an insulation layer on a surface of a surface consisting of a highly conductive material, said layer being separated from the first semiconductor substrate, and connection of the two insulation layers.de608621patent1994-4433330