Tessmann, AxelAxelTessmannLeuther, ArnulfArnulfLeutherLösch, R.R.LöschSeelmann-Eggebert, M.M.Seelmann-EggebertMassler, HermannHermannMassler2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36741510.1109/CSICS.2010.5619608In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to 465 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with a very compact design resulted in a die size of only 0.37 × 0.63 mm2.engrounded coplanar waveguidelow-noise amplifier (LNA)submillimeter-wave monolithic integrated circuit667conference paper