Jiang, X.X.JiangKlages, C.-P.C.-P.Klages2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18298010.1016/0925-9635(93)90282-7Highly oriented diamond films have been deposited on mirror-polished single crystalline (100) silicon by microwave plasma CVD. The crystallites are grown with their (001) planes parallel to the silicon (001) plane and their (110) directions parallel to silicon (110), as is shown by scanning electron microscopy (SEM) and x-ray diffraction analysis.en100 Silicium100 siliconDiamantdiamondHeteroepitaxieheteroepitaxyhydrogenMethanmethanemicrowave plasma CVDMikrowellen-Plasma-CVDWasserstoff667553Heteroepitaxial diamond growth on (100) siliconjournal article