Kim, Hong-KiHong-KiKimKim, SeongjunSeongjunKimBuettner, JonasJonasBuettnerLim, MinwhoMinwhoLimErlbacher, TobiasTobiasErlbacherBauer, A.J.A.J.BauerKoo, Sang-MoSang-MoKooLee, Nam-SukNam-SukLeeShin, Hoon-KyuHoon-KyuShin2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/40530710.4028/www.scientific.net/MSF.963.429In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS analysis, work function and Si-C binding energy of implanted samples were increased compared to the reference 4H-SiC sample. Those variations may be caused by lattice disorder and amorphization. In addition, TEM image showed damaged area in 4H-SiC epitaxial layer.en4H-SiCion implantationsurface propertywork functionbinding energy670620530conference paper