Rehm, RobertRobertRehmMasur, J.-M.J.-M.MasurSchmitz, J.J.SchmitzDaumer, VolkerVolkerDaumerNiemasz, JasminJasminNiemaszVandervelde, T.T.VanderveldeDeMeo, D.D.DeMeoLuppold, WolfgangWolfgangLuppoldWauro, M.M.WauroWörl, AndreasAndreasWörlRutz, FrankFrankRutzScheibner, R.R.ScheibnerZiegler, J.J.ZieglerWalther, MartinMartinWalther2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23161510.1016/j.infrared.2012.12.0012-s2.0-84878397397Future heterojunction InAs/GaSb superlattice (SL) detector devices in the long-wavelength infrared regime (LWIR, 8-12 µm) require an accurate bandstructure model and a successful surface passivation. In this study, we have validated the superlattice empirical pseudopotential method developed by G. C. Dente and M. L. Tilton over a wide range of bandgap energies. Furthermore, dark current data for a novel dielectric surface passivation for LWIR devices is presented. Next, we present a technique for high-resolution, full-wafer mapping of etch pit densities on commercial (100) GaSb substrates, which allows to study the local correlation between threading dislocations in the substrate and the electro-optical pixel performance. Finally, recent performance data for 384×288 dual-color InAs/GaSb superlattice imagers for the mid-wavelength infrared (MWR, 3-5 µm) is given.enInAs/GaSb superlatticeinfrared focal plane arraydual-colorMWIRLWIRSuperlattice empirical pseudopotential method667535journal article