Maroldt, S.S.MaroldtQuay, RüdigerRüdigerQuayHaupt, C.C.HauptKiefer, R.R.KieferWiegner, D.D.WiegnerAmbacher, OliverOliverAmbacher2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/367297This work describes the integration of Schottkydiodes into fast GaN MMIC technology suitable for the realization of switch-mode amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called 3rd-quadrant-issue, which reduces the efficiency in bandpass-Delta-Sigma class-S-type amplifiers, can be diminished on device level. MMIC core chips are demonstrated which provide good PAE under Delta-Sigma operation at 5.2 Gbps.en667conference paper