Schmid, U.U.SchmidSledzik, H.H.SledzikSchuh, P.P.SchuhSchroth, J.J.SchrothOppermann, M.M.OppermannBrückner, PeterPeterBrücknerRaay, Friedbert vanFriedbert vanRaayQuay, RüdigerRüdigerQuaySeelmann-Eggebert, M.M.Seelmann-Eggebert2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23321510.1109/TMTT.2013.2268055This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported chip set consists of a driver amplifier (DA) MMIC and an HPA MMIC on a high-power gallium-nitride process with high electronic-mobility transistors. The DA reaches a power gain of 11 dB and maximum output power of 2 W, which is sufficient to drive a final stage in a balanced configuration. The HPA reaches a typical output power of 12.5 and 10.6 W in pulsed and continuous wave (CW) operation, respectively. Measurements on the module level indicate 18.5-W typical output power in both pulsed and CW operation.engallium nitridehigh power amplifiersmicrowave integrated circuitstransmit modulesultra-wideband technology667621journal article