Semmelroth, K.K.SemmelrothSchmid, F.F.SchmidKarg, D.D.KargPensl, G.G.PenslMaier, M.M.MaierGreulich-Weber, S.S.Greulich-WeberSpaeth, J.M.J.M.Spaeth2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/342083A solid phosphorus source is used to dope 6H-SiC single crystals with phosphorus donors during the sublimation growth. Several characterization techniques are applied to detect the incorporated phosphorus content.en621667Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely methodconference paper