Under CopyrightHerbert, StefanStefanHerbertBanyay, MatusMatusBanyayMaryasov, AlexeyAlexeyMaryasovHochschulz, FrankFrankHochschulzPaschen, UweUwePaschenVogt, HolgerHolgerVogtJuschkin, LarissaLarissaJuschkin2022-03-041.10.20162012https://publica.fraunhofer.de/handle/publica/22810510.24406/publica-r-22810510.1109/TED.2011.2177838We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.endefect inspectionextreme ultraviolet (EUV) complementary metal-oxide-semiconductor (CMOS)EUV microscopyCMOSBildsensorEUVEUV-LDOSEEUV CMOS image sensor621Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultravioletjournal article