Erdmann, A.A.ErdmannKalus, C.K.C.K.KalusSchmöller, T.T.SchmöllerKlyonova, Y.Y.KlyonovaSato, T.T.SatoEndo, A.A.EndoShibata, T.T.ShibataKobayashi, Y.Y.Kobayashi2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/34307210.1117/12.485390Standard simulations of optical projection systems for lithography with scalar or vector methods of Fourier optics make the assumption that the wafer stack consists of homogeneous layers. We introduce a general scheme for the rigorous electromagnetic field (EMF) simulation of lithographic exposures over non-planar wafers. Rigorous EMF simulations are performed with the finite-difference time-domain (FDTD) method. The described method is used to simulate several typical scenarios for lithographic exposures over non-planar wafers. This includes the exposure of resist lines over a poly-Si line on the wafer with orthogonal orientation, the simulation of "classical" notch problems, and the simulation of lithographic exposures over wafers with defects.en670620530conference paper