Dimroth, FrankFrankDimrothPellegrino, CarmineCarminePellegrinoOhlmann, JensJensOhlmannLackner, DavidDavidLacknerSchwar, JörgJörgSchwar2025-05-072025-05-072025Note-ID: 0000F09Ahttps://publica.fraunhofer.de/handle/publica/487369Engineered InP-on-GaAs substrates with diameters up to 200 mm provide a rigid, low-cost platform that can be rapidly ramped to production volumes.enCutting the cost of InP-based devicesjournal article