Under CopyrightLim, MinwhoMinwhoLimKim, SeongjunSeongjunKimRusch, OlegOlegRuschKang, Min-JaeMin-JaeKangSung, Mi-JeMi-JeSungKwak, JuyoungJuyoungKwakLee, Nam-SukNam-SukLeeShin, Hoon-KyuHoon-KyuShinErlbacher, TobiasTobiasErlbacherBauer, AntonAntonBauer2022-03-157.12.20212021https://publica.fraunhofer.de/handle/publica/41322110.24406/publica-fhg-413221en670620530Frabrication and Evaluation of 4H-SiC Double Trench MOSFETs on 6-inch Waferpresentation