Esquivias, I.I.EsquiviasWeisser, S.S.WeisserTasker, P.J.P.J.TaskerLarkins, E.C.E.C.LarkinsFleissner, J.J.FleissnerAs, D.J.D.J.AsGallagher, D.F.G.D.F.G.GallagherRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweigZappe, H.P.H.P.Zappe2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/319485A GaAs/AlsubxGasub1-xAs multiple quantum well laser wi electrical modulation bandwidth of 16 GHz has been dev Optimized design of the waveguide, including implement average Al mole fraction (Xsubeff equals 0.8) GaAs/AlA period superlattice cladding layers, together with a c geometry, has resulted in a vertically compact laser s for integration. vertically compact laser structure suitable for integration.enGaAs/AlGaAshigh-speedHochgeschwindigkeitoptical data transmissionoptische Daten-ÜbertragungQuantum-Well-Laserdiodequantum well lasers621667conference paper