Gready, D.D.GreadyEisenstein, G.G.EisensteinIvanov, V.V.IvanovGilfert, C.C.GilfertSchnabel, F.F.SchnabelRippien, A.A.RippienReithmaier, J.P.J.P.ReithmaierBornholdt, C.C.Bornholdt2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23544310.1109/LPT.2013.2287502We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 mum. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm -1 per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.en535High speed 1.55 µm InAs/InGaAlAs/InP quantum dot lasersjournal article