Boettcher, NormanNormanBoettcherTakamori, TaroTaroTakamoriWada, KeijiKeijiWadaSaito, WataruWataruSaitoNishizawa, Shin-ichiShin-ichiNishizawaErlbacher, TobiasTobiasErlbacher2022-09-282022-09-282022https://publica.fraunhofer.de/handle/publica/42707110.1109/ISPSD49238.2022.98136282-s2.0-85134254113This work presents the switching performance of a novel solid-state circuit breaker device suitable for DC-applications up to 800 V. These "dual thyristor"devices are manufactured employing a 4H-SiC JFET technology. With respect to scalability, the influence of specific design parameters on the quasi-static output characteristics are discussed along with corresponding fabrication aspects. In order to investigate the switching performance, clamped and unclamped inductive switching (CIS and UIS) experiments at up to 800 V are carried out. In case of CIS, current clearance is achieved within 642 ns after the self-sensed trigger event at 1.75 A. The UIS experiments reveal stable current handling capability during avalanche.enconference paper