Browne, B.B.BrowneLacey, J.J.LaceyTibbits, ThomasThomasTibbitsBacchin, G.G.BacchinWu, T.-C.T.-C.WuLiu, J.Q.J.Q.LiuChen, X.X.ChenRees, V.V.ReesTsai, J.J.TsaiWerthen, J.-G.J.-G.Werthen2022-03-132022-03-132013https://publica.fraunhofer.de/handle/publica/39645410.1063/1.4822185III-V InGaP/InGaAs/Ge triple junction solar cells have been developed which incorporate quantum wells into the InGaAs and InGaP junctions. Characterization of such devices shows an absolute efficiency gain of up to 2% with Voc exceeding that of non-QW devices. Cells grown on 6â² wafers with quantum wells in the InGaAs junction are now commercially available with median efficiencies above 41%.enconference paper