Ufschlag, ThomasThomasUfschlagSchoch, BenjaminBenjaminSchochWrana, DominikDominikWranaWagner, SandrineSandrineWagnerSchwantuschke, DirkDirkSchwantuschkeRaay, Friedbert vanFriedbert vanRaayBrückner, PeterPeterBrücknerKallfass, IngmarIngmarKallfass2024-03-052024-03-052024https://publica.fraunhofer.de/handle/publica/46289810.1109/PAWR59907.2024.10438607This paper presents the design and measured performance of an integrated Gallium-Nitride-based power detector, which is tailored to monitor the output power of a state-of-the-art Gallium-Nitride high power amplifier in E-band (71-76GHz). To show the high power application, the temperature-compensated power detector is driven with a 1W millimeter-wave signal, which has not been shown before at frequencies in the range of 68-74GHz. The measured performance sets the state-of-the-art for integrated millimeter-wave power detection in terms of maximum detected power and shows the first on-chip integrated Gallium-Nitride millimeter-wave detector.enGallium nitrideSemiconductor detectorsMillimeter wave integrated circuitsHEMTsMMICsconference paper