Kantanen, M.M.KantanenKärkkäinen, M.M.KärkkäinenVaronen, M.M.VaronenKarttaavi, R.R.KarttaaviWeber, RainerRainerWeberLeuther, ArnulfArnulfLeutherSeelmann-Eggebert, M.M.Seelmann-EggebertNärhi, T.T.NärhiHalonen, K.K.Halonen2022-03-102022-03-102006https://publica.fraunhofer.de/handle/publica/35210210.1109/APMC.2006.4429402This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.enlow-noise amplifier (LNA)rauscharmer VerstärkerMMICmetamorphic high electron mobility transistormetamorpher Transistor mit hoher ElektronenbeweglichkeitMHEMT621667conference paper