Under CopyrightWolf, F. AlexanderF. AlexanderWolfMartinez-Limia, AlbertoAlbertoMartinez-LimiaStichtenoth, DanielDanielStichtenothPichler, PeterPeterPichler2022-03-0424.4.20142014https://publica.fraunhofer.de/handle/publica/23575810.24406/publica-r-23575810.1109/JPHOTOV.2014.2312103This paper is motivated by the question of how residual implantation damage degrades solar cell performance. In order to avoid such degradation, annealing processes of implanted c-Si solar cells use high thermal budgets. Still, implantation-induced dislocation loops may survive these processes. We derive two models for the annealing kinetics of dislocation loops that are suitable for the study of high thermal budgets: a model that is able to describe the parallel ripening of faulted and perfect dislocation loops and a model that explicitly implements the conservative and nonconservative processes associated with Ostwald ripening. Both models lead to a better agreement with the experiment than what has been published before.enc-Sisiliconsolar cellsdislocation loopsjournal article