Sorgenfrei, T.T.SorgenfreiBachem, K.-H.K.-H.BachemSchneider, J.J.SchneiderKirste, LutzLutzKirsteKunzer, MichaelMichaelKunzerFiederle, M.M.Fiederle2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22871510.1002/crat.2011004702-s2.0-84857762233This work investigates the extrinsic molecular doping of zinc oxide (ZnO) thin films grown by plasma enhanced molecular beam epitaxy (P-MBE). The dopant was thermally evaporated arsenic trioxide (formula: As 2O 3 in the solid state), which appears as As 4O 6 molecule in the gaseous phase. Cracking experiments of these As4O6 molecules were made using a radio frequency oxygen plasma. Structural, chemical and optical investigations were made with (High Resolution) X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and photoluminescence (PL). These results show high incorporation rates (about 2x10 18 cm -3) and optical activity of the dopant.en667548journal article