Canegallo, R.R.CanegalloFazzi, A.A.FazziCiccarelli, L.L.CiccarelliMagagni, L.L.MagagniNatalia, F.F.NataliaRolandi, P.P.RolandiJung, E.E.JungCioccio, L. diL. diCioccioGuerrieri, R.R.Guerrieri2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/36132810.1109/CICC.2007.4405670A 3D Interconnection scheme based on capacitive coupling for high speed chip to chip communication has been implemented in a 0.13m CMOS process. This paper provides detailed design example for both synchronous and asynchronous transmitter and receiver circuits. The first approach shows with electrodes 15×15m2 a wide range of operating frequency up to 900M H z with an energy consumption of 41 f J/bit. In the asynchronous scheme we demonstrate with electrodes 8×8m2 a vertical propagation of clock at 1.7GH z and a propagation delay of 420ps for general purpose signal with energy consumption of 80 f J/bit. Functionality and performance have been demonstrated by using both die-level and wafer-level assembly flows and BER measurements show the reliability of these AC interconnections with no error on more than 1013 bits transmitted.en6213D capacitive interconnections for high speed interchip communicationconference paper