Hackenberg, M.M.HackenbergHuet, K.K.HuetNegru, R.R.NegruFisicaro, G.G.FisicaroLa Magna, A.A.La MagnaTaleb, N.N.TalebQuillec, M.M.QuillecPichler, P.P.Pichler2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23543410.1002/pssc.201300156In this work, we present a model describing the boron redistribution during laser thermal annealing in the melting regime based on the adsorption of boron atoms at the solid-liquid interface. To validate the model, we performed SIMS measurements on silicon samples implanted with boron with an energy of 3 keV and doses of 3×10¹³ cm-2 and 4×10¹⁴ cm-2 annealed with a XeCl excimer laser with a wavelength of 308 nm, a pulse duration of 160 ns, and up to 10 consecutive pulses. After calibration, our model is able to reproduce the measured profiles for the different process conditions.enmelting laser thermal annealingboronbuild-updiffusionjournal article