Yoo, G.G.YooLee, H.H.LeeRadtke, D.D.RadtkeStumpf, M.M.StumpfZeitner, U.U.ZeitnerKanicki, J.J.Kanicki2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22115110.1016/j.mee.2009.05.032We report on the design and fabrication methods for a hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a non-planar substrate using laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The fabricated a-Si:H TFT exhibits a field-effect mobility of 0.27 cm2/V s, threshold voltage of 4.9 V and on/off current ratio of not, vert, similar6 × 106 in a saturation regime. The obtained results demonstrate that it is possible to fabricate the a-Si:H TFTs and complex circuitry on a curved surface, using a well-established a-Si:H TFT technology in combination with the maskless lithography, for hemispherical or non-planar sensor arrays.enmaskless lithographythin-film transistornon-planar surface620621journal article