Wilkening, W.W.WilkeningBauser, E.E.BauserKaufmann, U.U.Kaufmann2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/17987510.1088/0268-1242/6/10B/016A new, light-induced electron paramagnetic resonance (EPR) signal with apparent tetragonal symmetry has been observed in n-type Alsub0.68Gasub0.32As:Sn layers grown on SI-GaAs. A comparison with previous magnetic resonance data for the shallow Si donor indicates that the signal corresponds to the shallow, X-valley- associated effective-mass state of the Sn donor. The optical behaviour of the new signal shows that the shallow state is a metastable state of the Sn DX centre. The nearly vanishing EPR intensity for magnetic fields in the layer is attributed to the large spin-valley interaction expected for the shallow Sn donor in indirect AlGaAs.enelectron paramagnetic resonanceElektronenspinresonanzflacher DonatorGaAs/AlGaAs heterostructureGaAs/AlGaAs-Heterostrukturshallow donor621667530journal article