Sünbül, AyseAyseSünbülLehninger, DavidDavidLehningerLederer, MaximilianMaximilianLedererMähne, HannesHannesMähneHoffmann, RaikRaikHoffmannBernert, KerstinKerstinBernertThiem, SteffenSteffenThiemSchöne, FredFredSchöneDöllgast, MoritzMoritzDöllgastHaufe, NoraNoraHaufeRoy, LisaLisaRoyKämpfe, ThomasThomasKämpfeSeidel, KonradKonradSeidelEng, Lukas M.Lukas M.Eng2023-10-052023-10-052023https://publica.fraunhofer.de/handle/publica/45132310.1002/pssa.2023000672-s2.0-85149586152Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal-oxide-semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and the thickness scaling are among the advantageous properties of hafnium oxide. Different requirements must be fulfilled for different applications of hafnium oxide. Herein, high-temperature annealing and operation conditions are analyzed in order to investigate nonvolatile memories for automotive applications. A strong imprint behavior (shift in coercive voltages) is observed after annealing hafnium-zirconium-oxide thin films at temperatures varied between 100 and 200 °C. The imprint behavior is a significant challenge in many applications. Therefore, to reduce/recover the undesirable imprint behavior caused by high-temperature treatment, two different ways are successfully examined and delineated here: endurance cycling and applying high electric fields.enferroelectrichafnium zirconium oxidehigh-temperature reliabilityimprintmemoryjournal article