Karches, B.B.KarchesWelter, K.K.WelterStieghorst, C.C.StieghorstWiehl, N.N.WiehlReich, T.T.ReichRiepe, StephanStephanRiepeKrenckel, PatriciaPatriciaKrenckelGerstenberg, H.H.GerstenbergPlonka, C.C.Plonka2022-03-052022-03-052017https://publica.fraunhofer.de/handle/publica/24595510.1007/s10967-016-5051-7In this study, we report on the investigation of a v-g-anticoincidence set up for the determination of phosphorus in silicon for photovoltaics by Instrumental Neutron Activation Analysis. For the suppression of disturbing v/g radiation emitted by impurities, a plastic scintillator for v-detection is surrounded by a well type NaI(Tl) g-detector. A suppression of 40 % for the impurities 60Co and 124Sb could be achieved. The limit of detection was determined to be less than 0.1 ppm. In order to correct different v absorption, dedicated Geant4 simulations were used. With first quantitative measurements the phosphorus concentration in silicon could be determined.enMaterialien - Solarzellen und TechnologiePhotovoltaikSilicium-PhotovoltaikfeedstockKristallisationwaferingspectroscopysolar grade siliconphosphorusINAAjournal article