Under CopyrightPei, L.L.PeiDuscher, G.G.DuscherSteen, C.C.SteenPichler, P.P.PichlerRyssel, H.H.RysselNapolitani, E.E.NapolitaniSalvador, D. deD. deSalvadorPiro, A.M.A.M.PiroTerrasi, A.A.TerrasiSeverac, F.F.SeveracCristiano, F.F.CristianoRavichandran, K.K.RavichandranGupta, N.N.GuptaWindl, W.W.Windl2022-03-0428.8.20082008https://publica.fraunhofer.de/handle/publica/21614710.1063/1.2967713The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI- XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be ~1x10(exp 15) cm-2 for an implanted dose of 1x10(exp 16) cm-2 with a maximum concentration of ~10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.enarsenicinterfacepile-upsegregationsiliconcharacterizationEELStxrf670530journal article