Saadeh, QaisQaisSaadehMesilhy, HazemHazemMesilhySoltwisch, VictorVictorSoltwischErdmann, AndreasAndreasErdmannCiesielski, RichardRichardCiesielskiLohr, Leonhard M.Leonhard M.LohrAndrle, AnnaAnnaAndrlePhilipsen, VickyVickyPhilipsenThakare, DeveshDeveshThakareLaubis, ChristianChristianLaubisScholze, FrankFrankScholzeKolbe, MichaelMichaelKolbe2023-11-082023-11-082022https://publica.fraunhofer.de/handle/publica/45665110.1117/12.26432462-s2.0-85145262439The interaction of matter and light can be described based on optical constants, shortly called δ&β. These constants provide the fundamental basis for the design of any optical system. In the Extreme Ultraviolet (EUV) spectral range, however, the existing data for many materials or compounds is very sparse, non-existent or exhibit considerable discrepancies between different sources. This is further complicated since the scaling effects stipulate the optical response of a thin film to differ from bulk. Oxidation, impurities or interdiffusion significantly affect the optical response of a system to EUV radiation. For this reason, the Physikalisch-Technische Bundesanstalt (PTB) is establishing a new database in cooperation with other European partners. This database, designated as the Optical Constants Database (OCDB) can be accessed online freely (OCDB.ptb.de). This data collection shall support further development of various fields from new metrological techniques, like EUV scatterometry to computational lithography in the EUV. This is demonstrated exemplarily here by the interplay between δ&β and the dimensional parameters with respect to a structured TaTeN EUV photomask. It is equally important either direction, to derive structure parameters from the measured EUV scattering as vice versa to predict the EUV response from the geometrical structure. In addition, the impact of varying δ and β on the expected imaging performance will be investigated by simulating typical lithographic image metrics like Critical Dimension (CD), best focus position, image contrast (NILS) and non-telecentricity for the imaging of through pitch L/S and 16 nm vertical Lines with 32 nm pitch in a NA=0.55 scanner for TaTeN mask absorber as typical representatives of high-k absorber materialsand as an example of the effect on imaging simulation.enEUV absorberExtreme Ultraviolet LithographyOptical ConstantsReflectivityThin filmsconference paper