Mo, JiaruiJiaruiMoNiu, YunfanYunfanNiuMay, AlexanderAlexanderMayRommel, MathiasMathiasRommelRossi, ChiaraChiaraRossiRomijn, JoostJoostRomijnZhang, GuoqiGuoqiZhangVollebregt, StenStenVollebregt2024-07-152024-07-152024https://publica.fraunhofer.de/handle/publica/47133010.1063/5.01950132-s2.0-85190069142Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.enopen accessjournal article