Buttard, D.D.ButtardDolino, G.G.DolinoBellet, D.D.BelletBaumbach, T.T.BaumbachRieutord, F.F.Rieutord2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19542610.1016/S0038-1098(98)00531-6X-ray reflectivity (XRR) was used to investigate the p- and p+ -type porous Silicon (PS) layers. For p- -type samples, a linear dependence of the thickness versus the anodization time was revealed in the 10-250 nm thickness range for even very short etching times and the layer structure was homogeneous with a transition layer at the PS/substrate interface. For p+ -type materials, a surface film was unexpectedly observed for layers of low porosity. The structure and origin of this surface film is discussed in this article.ensemiconductorx-ray scattering620658670530journal article