CC BY 4.0Neubieser, Rahel-ManuelaRahel-ManuelaNeubieserWree, Jan-LucasJan-LucasWreeJagosz, JuliaJuliaJagoszBecher, MalteMalteBecherOstendorf, AndreasAndreasOstendorfDevi, AnjanaAnjanaDeviBock, ClaudiaClaudiaBockMichel, Marvin D.Marvin D.MichelGrabmaier, AntonAntonGrabmaier2022-04-292022-04-292022https://publica.fraunhofer.de/handle/publica/414490https://doi.org/10.24406/h-41449010.1016/j.mne.2022.10012610.24406/h-414490The unique electronic and mechanical properties of transition metal dichalcogenides (TMDs) make them interesting for industry and research as the demand for two-dimensional (2D) material applications has been increased in the last decade. Most applications make use of the characteristic optical properties of the crystalline material. In this study, a low-temperature atomic layer deposition (ALD) process for layer-by-layer generation on 200 mm wafers is introduced. The deposited layers are characterized by XPS, XRD, Raman spectroscopy and AFM measurements. Four-point probe sheet resistance measurements show the high homogeneity of deposited layers. Compositional analysis reveals amorphous MoOxSy films and thickness measurements via SEM cross section and ellipsometry show a growth rate of about 0.1 nm/cycle. Further improvement of the film quality can be achieved by thermal annealing. MoS2 layers have also been found to be gas-sensitive to various gas molecules. For this application high crystallinity is not necessarily required and hence, this low-temperature wafer-scale process for 2D gas sensors can be integrated into already existing workflows for high-volume production on silicon wafers. Furthermore, it can also be applied on different substrates, for example on flexible thin glasses. The possible implementation to these substrates is also shown.en2D (two-dimensional)Molybdän(IV)-sulfid (MoS2)wafer-scalegas sensoratomic layer deposition (ALD)transition metal dichalcogenide (TMD)microsystem technologyjournal article