Kuhl, J.J.KuhlKlingenstein, M.M.KlingensteinLambsdorff, M.M.LambsdorffMoglestue, C.C.MoglestueAxmann, A.A.AxmannSchneider, J.J.SchneiderHülsmann, A.A.HülsmannRosenzweig, JosefJosefRosenzweig2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/318802Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal- photodiodes reveal the influence of field screening and optical phonon scattering on the frequency bandwidth of these detectors. The experimental results agree with theoretical predictions of a self- consistent two-dimensional Monte Carlo calculation.enelectrooptic samplingelektrooptisches SamplingFeldabschirmungfield screeningGaAsmetal-semiconductor-metal photodiodeMetall-Halbleiter-Metall-PhotodiodeMonte Carlo methodsphotoconductive samplingPhotoleitungs-Sampling621667Limitations of the impulse response of GaAs metal-semiconductor metal photodetectors.Beschränkungen in der Impulsantwort von GaAs-Metall-Halbleiter Metall Photodetektorenconference paper