Banzhaf, C.T.C.T.BanzhafGrieb, M.M.GriebTrautmann, A.A.TrautmannBauer, A.J.A.J.BauerFrey, L.L.Frey2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38052410.4028/www.scientific.net/MSF.740-742.691This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011 cm-2 eV-1 under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.en670conference paper