Liu, X.X.LiuWegener, M.M.WegenerPolster, S.S.PolsterJank, M.P.M.M.P.M.JankRoosen, A.A.RoosenFrey, L.L.Frey2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24456010.1109/JDT.2015.2445378We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 cm(2) . V-1 . s(-1) with respect to 0.08 cm(2) . V-1 . s(-1) without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.en621journal article