Esquivias, I.I.EsquiviasWeisser, S.S.WeisserSchönfelder, A.A.SchönfelderRalston, J.D.J.D.RalstonTasker, P.J.P.J.TaskerLarkins, E.C.E.C.LarkinsFleissner, J.J.FleissnerBenz, W.W.BenzRosenzweig, JosefJosefRosenzweig2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322349An experimental and modelling investigation concerning the effects of p-doping on the DC and high-frequency properties of MBE grown In sub 0.35 Ga sub 0.65 As/GaAs strained-layer MQW lasers is presented. P-doping produces a substantial decrease in the non-linear gain coefficient, which can be attributed to a doping-induced decrease in the intraband relaxation time, and a small increase in the differential gain. The factors limiting the maximum measured modulation bandwidth of the p-doped devices (30 GHz) are analyzed and discussed.enInGaAs/GaAsMQW laser diodeMQW Laserdiodep-dopingp-Dotierungstrained layerverspannte Schicht621667conference paper