Kuhl, J.J.KuhlStrobel, R.R.StrobelEccleston, R.R.EcclestonKöhler, KlausKlausKöhler2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/318467The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross- correlation technique, a bi-molecular formation coefficient of 6x10highminus12qcm/ps is determined. The electron and hole tunneling times are also simultaneously obtained.enheterostructureHeterostrukturIII-V HalbleiterIII-V semiconductorspicosecond optoelectronicquantum wells621667conference paper