Kuenzel, H.H.KuenzelAlbrecht, P.P.AlbrechtGibis, R.R.GibisHamacher, M.M.HamacherSchelhase, S.S.Schelhase2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/1895052-s2.0-0030193856The MOMBE growth of Ga0.11In0.89As0.23P0.77 material with a band gap equivalent emission wavelength of 1.05 mu m carried out in the growth temperature range of 465-500 degrees C provided material of high structural and optical quality as well as high lateral uniformity and reproducibility of the alloy composition. The low-temperature photoluminescence linewidth below 5 meV and the X-ray diffraction linewidth approaching the theoretical limit have been obtained at the growth temperature of 465 degrees C. Rib waveguides fabricated by dry etching techniques on MOMBE GaInAsP layers grown at this temperature exhibit optical propagation losses down to 0.1 dB/cm at lambda =1.55 mu m.enchemical beam epitaxial growthetchinggallium arsenideiii-v semiconductorsindium compoundsinfrared spectraoptical planar waveguidesphotoluminescencesemiconductor epitaxial layerssemiconductor growthspectral line breadthMOMBE growthwaveguide applicationsband gap equivalent emission wavelengthgrowth temperaturetemperature dependenceoptical qualitylateral uniformityx ray diffractionlinewidthdry etchingoptical propagation losses1.05 to 1.7 mum465 to 500 cga0.11in0.89as0.23p0.77621548journal article