Bakonyi, Z.Z.BakonyiHui, S.S.HuiOnishchukov, G.G.OnishchukovLester, L.F.L.F.LesterGray, A.L.A.L.GrayNewell, T.C.T.C.NewellTünnermann, A.A.Tünnermann2022-03-032022-03-032003https://publica.fraunhofer.de/handle/publica/20457910.1109/JQE.2003.818306Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a -well" (DWELL) gain region having an aggregate dot density of approximately 8 x1 0 (hoch)11 CM(hoch)-2, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 ma, and the output saturation power is 9 dBm. The dependence of the amplifier parame ters on the pump current and the gain recovery dynamics has also been studied.ensemiconductor lasers; semiconductor optical amplifiersquantum-dot optical amplifiersemiconductor lasers620621High-gain quantum-dot semiconductor optical amplifier for 1300 nmjournal article