CC BY-NC-ND 4.0Maus, StephanStephanMausMaischner, FelixFelixMaischnerRiepe, StephanStephanRiepeGreulich, Johannes M.Johannes M.GreulichLohmüller, ElmarElmarLohmüllerSchindler, FlorianFlorianSchindlerSaint-Cast, PierrePierreSaint-CastKrenckel, PatriciaPatriciaKrenckelHess, A.A.HessLohmüller, SabrinaSabrinaLohmüllerWolf, AndreasAndreasWolfPreu, RalfRalfPreu2022-03-062022-03-062021Note-ID: 00005776https://publica.fraunhofer.de/handle/publica/268796https://doi.org/10.24406/h-26879610.1002/solr.20200075210.24406/h-268796Herein, boron-doped cast-monocrystalline silicon wafers that have been fabricated using the Seed Manipulation for ARtificially controlled defect Technique (SMART mono-Si) are examined. Their suitability for passivated emitter and rear cell (PERC) fabrication is investigated. Applying a zero busbar layout energy conversion efficiencies of η = 21.9% for SMART mono-Si, η = 22.2% for gallium-doped Cz-Si (Cz-Si:Ga), and η = 22.3% for boron-doped Cz-Si (Cz-Si:B) are achieved at similar doping levels between 0.7 Ωcm ≤ ρB ≤ 1.0 Ωcm. Therefore, SMART mono-Si PERCs show almost the same performance as Cz-Si PERCs. Apart from the performance of SMART mono-Si PERCs, the minority charge carrier bulk lifetime τB of the SMART mono-Si wafers after different high-temperature process steps in the PERC process flow is investigated. After emitter formation, this analysis confirms the high material quality of SMART mono-Si yielding τB = 1.3 ms at an injection level of Δn = 10E15 cm-3. The bulk lifetime after firing is similar to the level determined for mCz-Si:B and Cz-Si:Ga reference wafers of similar doping level.encast monoiron contaminationPERC621697journal article