Hageman, P.R.P.R.HagemanKirilyuk, V.V.KirilyukCorbeek, W.H.M.W.H.M.CorbeekWeyher, J.L.J.L.WeyherLucznik, B.B.LucznikBockowski, M.M.BockowskiPorowski, S.S.PorowskiMüller, StefanStefanMüller2022-03-032022-03-032003https://publica.fraunhofer.de/handle/publica/20437810.1016/S0022-0248(03)01259-4In this paper, an overview will be given of the growth of thick GaN layers by hydride vapor-phase epitaxy. Two different kinds of substrates were used, that is MOCVD-grown GaN templates on sapphire and GaN single crystals. The layers grown on sapphire-based substrates suffer from the problem of cracking and pit formation. Although the morphology is not mirror-like, the optical and electrical quality of the material is excellent as demonstrated by photoluminescence and Hall-Van der Pauw measurements. The layers grown an Ga-polar GaN single crystals have almost perfect morphologies with only a very low density of pits. For the N-polar substrates the morphology is very rough, exhibiting the same features as are observed for the N-face MOCVD-grown GaN layers, both an sapphire and an N-face GaN single crystals.enSubstratsubstrateepitaxyEpitaxienitrideGaNhydridevapor phase epitaxyGasphasenepitaxie621667548journal article