Pfanner, K.K.PfannerFranke, D.D.FrankeSartorius, B.B.SartoriusSchlak, M.M.Schlak2022-03-022022-03-021988https://publica.fraunhofer.de/handle/publica/175457The use of a Sn-In-P melt and of InP cover wafers of different orientations to prevent thermal surface decomposition of InP substrates in liquid phase epitaxy has been compared. An almost equivalent protection efficiency was found for the Sn-In-P solution and a (111B) wafer. However, with the melt approach a remarkable increase of residual impurity density was observed particularly at the interface of epitaxial InGaAs layers.eniii-v semiconductorsindium compoundsliquid phase epitaxial growthsemiconductor growthsemiconductorsprotection methodssubstrate decompositionliquid phase epitaxythermal surface decompositionmelt approachresidual impurity densityInP cover waferssn-in-p solutionepitaxial InGaAs layers621548journal article