Haberger, K.K.HabergerPanish, P.P.PanishBuchner, R.R.BuchnerSteinberger, H.H.Steinberger2022-03-082022-03-081987https://publica.fraunhofer.de/handle/publica/315679A laser recrystallization equipment has been developed using a high power CO2 laser. This system allows full wafer processing using a sweeped-line zone melt system. It has the high energy density required to maintain a temperature differential between the molten polysilicon layer and the substrate, as well as the high throughput rate of a zone processing system. MOS transistors have been fabricated in recrystallized polysilicon layers and characterized through electrical measurements. (IFT)en3D-IntegrationLaserkristallisationMOS TransistorPoly-SiliziumSOIconference paper