Dell'Olio, F.F.Dell'OlioCiminelli, C.C.CiminelliArmenise, M.N.M.N.ArmeniseSoares, F.M.F.M.SoaresRehbein, W.W.Rehbein2022-03-122022-03-122012https://publica.fraunhofer.de/handle/publica/37892310.1109/ICIPRM.2012.64033362-s2.0-84873168884Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 m has a quality factor exceeding 7×105 and resonance depth close to 10 dB.en621conference paper