Friesicke, ChristianChristianFriesickeJacob, A.F.A.F.JacobQuay, RüdigerRüdigerQuay2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38637910.1109/MIKON.2014.6899877This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). They are realized using a 100nm AlGaN/GaN HEMT technology which, in addition to coplanar lines, supports microstrip lines to cover the needs of applications between X- and Ka-band frequencies. The presented MMICs are among the first power amplifiers designed with the microstrip library and are used to evaluate the technology's performance at K-band. Both amplifiers are singlestage designs, where one uses only a single 8 x 75 µm HEMT cell and the other one uses two cells with power-combining. In largesignal measurements, the amplifiers reached, respectively, peak efficiencies of 36% and 38% associated with output powers of 0.93W and 1.48W and drain efficiencies of 61% and 51%.engallium nitridehigh power amplifiersMMICsK-bandsatellite communication667conference paper