Widmann, C.J.C.J.WidmannMüller-Sebert, W.W.Müller-SebertLang, NicolaNicolaLangNebel, C.E.C.E.Nebel2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24243910.1016/j.diamond.2015.12.016The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor will be introduced and discussed in detail. Optimized diamond growth conditions were determined for homoepitaxy on (100)-oriented high-temperature high-pressure (HPHT) seed crystals using Raman scattering and confocal-micro-photoluminescence spectroscopy measurements.enHomoepitaxial diamond growth(100)-oriented seedsmicrowave assisted chemical vapor depositionAlpha parameter553journal article