Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi

Noll, S.S.NollScholten, D.D.ScholtenGrieb, M.M.GriebBauer, A.J.A.J.BauerFrey, L.L.Frey2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38100510.4028/www.scientific.net/MSF.740-742.521In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced.en670Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epiconference paper