Yoo, G.G.YooRadtke, D.D.RadtkeBaek, G.G.BaekZeitner, U.D.U.D.ZeitnerKanicki, J.J.Kanicki2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22436410.1109/TED.2010.20884032-s2.0-78650914747We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 µm on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift?Vth of the a-Si:H TFT under bias-temperature stress is investigated and discussed in comparison to a device fabricated on a flat surface. The obtained results show that the a-Si:H TFTs fabricated by LWL method on a curved surface are suitable for pixel switches and circuits, which are needed to realize image sensor arrays and/or displays on a nonplanar surface.enamorphous silicona-Simaskless laser-write lithography (LWL)nonplanar surfacethin-film transistorTFTthreshold voltage shift620621journal article