Gutt, R.R.GuttPassow, ThorstenThorstenPassowKunzer, MichaelMichaelKunzerPletschen, WilfriedWilfriedPletschenKirste, LutzLutzKirsteForghani, K.K.ForghaniScholz, F.F.ScholzKöhler, KlausKlausKöhlerWagner, J.J.Wagner2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22819810.1143/APEX.5.032101High-efficiency AlGaN-based 355nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates are reported. Flip-chip-mounted mesa LEDs exhibit an output power of 9.8mW (22.7mW) at a DC current of 40mA (100 mA), corresponding to an external quantum efficiency of 7% at 40 mA. Due to the low forward voltage of only 3.8V at 40 mA, this translates into a power efficiency of 6.5% at 40 mA. These performance data have been achieved under optimized growth conditions for the low-In-content (AlGaIn)N single quantum well and a reduced thickness of the absorbing p-GaN top layer.en667530journal article