Grotjohn, T.A.T.A.GrotjohnNicley, S.S.NicleyIran, D.D.IranReinhard, D.K.D.K.ReinhardBecker, M.M.BeckerAsmussen, J.J.Asmussen2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/370174The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.en621conference paper